Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Marking code: FB. The SOT package is designed for surface-mounting.
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Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1. See device orientation. Repetitive rating; pulse width limited by maximum junction temperature see fig.
E, Aug 1 Document Number: For technical questions, contact: hvm vishay. Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Marking code: FB. The SOT package is designed for surface-mounting. Its unique package design allows for easy automatic. Power dissipation of. Lead Pb -free and Halogen-free.
Lead Pb -free. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain Current. Pulsed Drain Current a. Linear Derating Factor. Single Pulse Avalanche Energy b. Repetitive Avalanche Current a. Repetitive Avalanche Energy a. Maximum Power Dissipation.
Operating Junction and Storage Temperature Range. Soldering Recommendations Peak Temperature d. E, Aug Document Number: For technical questions, contact: hvm vishay. No Preview Available! PCB Mount a. R thJA. Maximum Junction-to-Case Drain. R thJC. Drain-Source Breakdown Voltage. V DS Temperature Coefficient. Gate-Source Threshold Voltage. Gate-Source Leakage. Zero Gate Voltage Drain Current. Drain-Source On-State Resistance. Forward Transconductance. V GS th. I GSS.
I DSS. R DS on. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. C iss. C oss. C rss. Internal Drain Inductance. Internal Source Inductance. Drain-Source Body Diode Characteristics. Continuous Source-Drain Diode Current. Pulsed Diode Forward Current a.
IRFL110 MOSFET. Datasheet pdf. Equivalent